A Probability Soft-Error Model for a 28-nm SRAM-based FPGA under Neutron Radiation Exposure

Gia Bao Thieu, Johannes Schmechel, K. Weide-Zaage, Katharina Schmidt, Dorian Hagenah, G. Payá-Vayá
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Abstract

Bit errors due to radiation effects are becoming increasingly important as the fabrication technologies are shrinking with every generation of integrated circuits. The resulting smaller transistors are more prone to high-energy irradiation. This is relevant in avionics or even automotive, where the safety of millions of cars must be ensured. This paper proposes an experiment, where multiple FPGAs (Field Programmable Gate Arrays) are exposed to 2.45MeV neutron irradiation in parallel. Bitflips in different memory components (Block RAM, Flip-Flops, lookup-tables and configuration memory) are detected. The results show that bitflips could be detected in every memory component in every part of the FPGA. Finally, a soft-error probability model depending on the irradiation fluence can be determined. With the probability model, future implementations of fault-tolerant hardware architectures can be tested with hardware simulations using artificially generated bitflips.
基于sram的28nm FPGA在中子辐射下的概率软误差模型
随着集成电路制造技术的不断发展,由于辐射效应引起的比特误差变得越来越重要。由此产生的更小的晶体管更容易受到高能辐照。这与航空电子设备甚至汽车相关,因为必须确保数百万辆汽车的安全。本文提出了一个实验,将多个fpga(现场可编程门阵列)并行暴露于2.45MeV中子辐照下。在不同的内存组件(块RAM,触发器,查找表和配置内存)位翻转被检测。结果表明,在FPGA的每个部分的每个存储元件中都可以检测到位翻转。最后,建立了基于辐照量的软误差概率模型。有了概率模型,未来的容错硬件架构的实现可以通过使用人工生成的位翻转的硬件模拟进行测试。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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