Comparison of CDM and CC-TLP robustness for an ultra-high speed interface IC

Johannes Weber, R. Fung, R. Wong, H. Wolf, A. Horst Gieser, L. Maurer
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引用次数: 9

Abstract

Challenging the limits of today’s metrology and test setups for CDM and Capacitively Coupled Transmission Line Pulsing (CC-TLP), the study identifies critical stress parameters for A25 Gbps communication device in the CDM-domain. Only CC-TLP stress in combination with a 33/ 63 GHz single shot oscilloscope was able to relate significant differences of failure current distributions to the rise time spread in the order of few tens of picoseconds and to obtain a conclusive sharp pass/fail transition at a certain peak current level.
超高速接口集成电路中CDM和CC-TLP鲁棒性的比较
该研究挑战了目前CDM和电容耦合传输线脉冲(CC-TLP)的计量和测试设置的局限性,确定了CDM领域A25 Gbps通信设备的关键应力参数。只有CC-TLP应力与33/ 63 GHz单次发射示波器相结合,才能将失效电流分布的显著差异与几十皮秒量级的上升时间扩展联系起来,并在一定的峰值电流水平上获得决定性的急剧通过/失败转变。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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