On-chip current sensing circuit for CMOS VLSI

Tung-Li Shen, J. Daly, Jien-Chung Lo
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引用次数: 23

Abstract

CMOS is a popular technology today for very large scale integrated (VLSI) circuits. But, conventional functional testing cannot guarantee the detection of some defects. Built-in current testing has been suggested to enhance the defect coverage. In this paper, the authors present a high-speed built-in current sensing (BICS) circuit design. An experimental CMOS VLSI chip containing BICS is described. The power bus current of an 8*8 parallel multiplier is monitored. This BICS detects all implanted short circuit defects and some open circuit defects at a clock speed of 30 MHz (limited by the test set up). SPICE3 simulations indicate a defect detection time of 2 ns.<>
CMOS VLSI片上电流传感电路
CMOS是当今非常流行的大规模集成电路技术。但是,常规的功能测试并不能保证对某些缺陷的检测。建议内置电流测试来增强缺陷覆盖率。本文提出了一种高速内置电流传感(BICS)电路设计。介绍了一种包含BICS的实验性CMOS VLSI芯片。对8*8并联乘法器的电源母线电流进行了监测。该BICS检测所有植入的短路缺陷和一些开路缺陷,时钟速度为30 MHz(受测试设置限制)。SPICE3仿真表明,缺陷检测时间为2ns。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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