Analysis of Hall Factor in Isotropic Polysilicon

V. M. Lubimsky, A. Moiseev
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Abstract

A model of isotropic polycrystal is proposed. All crystallites are regarded as spheres having the same diameter d. The distance between the centers of the spheres cannot be less than d. The distribution of the centers of the crystallites in the polycrystal is described by the radial distribution function given by the rigid spheres model. In the framework of the model the charge carriers relaxation time τbon potential barriers, taking place at the surfaces of the crystallites, is dependent only on energy ε of the charge carrier (τb= τb(ε)). The calculation of the Hall-factor caused by the scattering on the potential barriers in the polycrystalline silicon is presented.
各向同性多晶硅的霍尔因子分析
提出了一种各向同性多晶模型。所有的晶体都被视为具有相同直径d的球体,球体中心之间的距离不能小于d。晶体中心在多晶中的分布由刚性球体模型给出的径向分布函数来描述。在模型框架中,发生在晶体表面的载流子弛豫时间τ碳势垒仅依赖于载流子的能量ε (τb= τb(ε))。给出了多晶硅中势垒散射引起的霍尔因子的计算方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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