{"title":"Analog image processing circuit with 0.25µm CMOS compatible SOS MESFETs","authors":"S. Kim, W. Lepkowski, T. Thornton, B. Bakkaloglu","doi":"10.1109/SOI.2010.5641396","DOIUrl":null,"url":null,"abstract":"Image processing with Analog Neural Networks, performing horizontal line detection is demonstrated in a single poly, 3-layer metal digital CMOS technology utilizing SOS MESFET devices. Transient characteristics are measured by applying several combinations of grayscale input images. The measured transient response of the ANN array shows good agreement with simulations based on a TOM3 model extracted from the SOS MESFET. A worst case settling time of 4µs is achieved with the line detector.","PeriodicalId":227302,"journal":{"name":"2010 IEEE International SOI Conference (SOI)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International SOI Conference (SOI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2010.5641396","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Image processing with Analog Neural Networks, performing horizontal line detection is demonstrated in a single poly, 3-layer metal digital CMOS technology utilizing SOS MESFET devices. Transient characteristics are measured by applying several combinations of grayscale input images. The measured transient response of the ANN array shows good agreement with simulations based on a TOM3 model extracted from the SOS MESFET. A worst case settling time of 4µs is achieved with the line detector.