{"title":"Predicting large-signal CML gate delay using Y-Parameters for fast process optimization","authors":"S. Shankar, W. van Noort, J. Cressler","doi":"10.1109/BCTM.2013.6798177","DOIUrl":null,"url":null,"abstract":"A Y-Parameter based Figure-of-Merit (FoM) is proposed that can accurately predict large-signal Current-Mode Logic (CML) gate delay from small-signal S-parameter simulations/measurements. A differential-mode (DM) half circuit of an emitter-coupled differential pair with resistive load is used as the small-signal building block. The FoM is applied to various collector current (IC) and load resistor (RL) combinations obtained from the power-delay curve of a prototype SiGe technology platform. Results of the FoM delay predictions are compared with ring oscillator gate delays. A small-signal model parameter based equation is also proposed that provides physical insight into the components that contribute to the overall CML delay.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCTM.2013.6798177","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A Y-Parameter based Figure-of-Merit (FoM) is proposed that can accurately predict large-signal Current-Mode Logic (CML) gate delay from small-signal S-parameter simulations/measurements. A differential-mode (DM) half circuit of an emitter-coupled differential pair with resistive load is used as the small-signal building block. The FoM is applied to various collector current (IC) and load resistor (RL) combinations obtained from the power-delay curve of a prototype SiGe technology platform. Results of the FoM delay predictions are compared with ring oscillator gate delays. A small-signal model parameter based equation is also proposed that provides physical insight into the components that contribute to the overall CML delay.