On-chip silicon odometers and their potential use in medical electronics

J. Keane, C. Kim
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引用次数: 4

Abstract

The parametric shifts or circuit failures caused by transistor aging have become more severe with shrinking device sizes and voltage margins. Designing circuits that can withstand these aging effects is particularly critical in medical applications where systems must operate flawlessly across a range of conditions for their entire lifetimes. In this work we present several on-chip Silicon Odometers that provide measurement data required to develop transistor degradation models. One such scheme-a beat frequency detection circuit capable of recording oscillator frequency shifts ranging down to a theoretical limit of less than 0.01%-may be suited to trigger real-time adjustments that compensate for lost performance on products in the field. Incorporating this sensing capability may be especially attractive in implantable medical electronics.
片上硅里程表及其在医疗电子领域的潜在应用
随着器件尺寸和电压裕度的缩小,晶体管老化引起的参数偏移或电路故障变得越来越严重。设计能够承受这些老化效应的电路在医疗应用中尤为关键,因为系统必须在整个生命周期内在一系列条件下完美运行。在这项工作中,我们提出了几个片上硅里程表,提供开发晶体管退化模型所需的测量数据。一种这样的方案——一种能够记录振荡器频率移至小于0.01%的理论极限的拍频检测电路——可能适合于触发实时调整,以补偿现场产品的性能损失。结合这种传感能力在植入式医疗电子产品中可能特别有吸引力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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