Damageless and conformai doping for FinFETs by spin-coated phosphorus doped silica

Abstract

Damageless and conformal doping process for FinFETs is demonstrated by solid diffusion utilizing cost-effective spin-coated phosphorus dopes silica (PDS). Damageless nature of the PDS diffusion doping is confirmed by TEM characterization of the doped fin. The PDS diffusion is successfully implemented in the extension doping of the FinFETs. The fabricated FinFETs with the PDS diffusion doping exhibit suppression of the series resistance and its fluctuation in comparison with the phosphorus I/I reference, showing effectiveness of the PDS diffusion as the damageless and conformal doping solution required for the further-scaled FinFETs in future.