Evaluation of Crack Propagation at the Interconnection Interface Induced by Warpage of Fan-Out Wafer-Level-Package

A. Park, Jae Hak Lee, J. Song, S. Kim, Seongheum Han
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引用次数: 3

Abstract

This study is to evaluate crack propagation possibility at the interconnection interface of FOWLP induced by warpage. The strain energy release rate (SERR) around the region of interests was calculated using Finite element (FE) analysis. The estimated SERR was compared with the measured critical SERR to predict the risk of the crack propagation at the interface. Moreover, a parametric study was performed to analyze the sensitivity of design parameters to define the most critical one affects crack propagation. This study may give ideas of delamination at the interconnection interface and the main parameter results in the failure induced by warpage of FOWLP.
扇形外圆片级封装翘曲致互连界面裂纹扩展的评价
本研究旨在评估受翘曲影响的FOWLP互连界面裂纹扩展可能性。采用有限元法计算了感兴趣区域周围的应变能释放率(SERR)。将估计SERR与实测临界SERR进行比较,预测界面处裂纹扩展的风险。此外,还进行了参数化研究,分析了设计参数的敏感性,以确定影响裂纹扩展的最关键参数。本文的研究可以为互连界面的分层和导致FOWLP翘曲破坏的主要参数提供思路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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