Sheet resistance measurement for process monitoring of 400 °C PureB deposition on Si

Abstract

Sheet-resistance test-structures to determine conductance along the interface formed by 400°C pure boron (PureB) deposition on silicon are presented. The structures are straightforward to fabricate and measure for monitoring either directly after deposition or end-of-line. This provides valuable information on the perfection of the deposition and the series resistance of PureB (photo)diodes.