Characteristics of the PZT thin film device fabricated on the single grain

Abstract

It was found that when tantalum was added to PZT (PbZr/sub x/Ti/sub 1-x/O/sub 3/), the grain size of the sputter-deposited PZT films could be significantly enlarged so that abnormally large single grains could be obtained through so called SRCC (Selective Radiation Controlled Crystallization) process. Electrical measurements of the single grained PZT thin films strongly indicated that the current problems with the polycrystalline PZT thin films such as high leakage current, low breakdown field, fatigue and aging can be solved. The single grained PZT films showed low leakage current (J/sub LC//spl sim/1/spl times/10/sup -8/ A/cm/sup 2/) and excellent polarization properties (Q/sub c//spl sim/35 /spl mu/C/cm/sup 2/, Pr/spl sim/15 /spl mu/C/cm/sup 2/).