Extension of copper plating to 0.13 /spl mu/m nodes by pulse-modulated plating

Abstract

The electro-chemical deposition of copper can carried out by normal DC plating or using pulse plating approach. The superfill for gap fill can be achieved using either of these approaches-DC plating or pulse plating. The pulse plating approach has been observed to show advantages of greater tolerance to seed layer morphology besides controlled planarity, with no major detrimental effects on electrical yield or other film properties.