Targeting Zero DPPM through Adoption of Advanced Fault Models and Unique Silicon Fall-out Analysis

Aravind Acharya, Nikita Naresh, P. Narayanan, R. Parekhji, Kevin Roush, Humberto Ibarra, Rajiv Sheth, Clarence Flora, Wilson Pradeep
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引用次数: 1

Abstract

The test of digital circuits has benefitted greatly from the adoption of logical fault models and automatic test pattern generation (ATPG) tools targeting them. The cyclic process of defects in newer technology nodes being increasingly missed out by gross fault models and newer fault models being developed to better target them in silicon has continued, and EDA tools have evolved to provide new automation capabilities. This paper presents silicon results on one of Texas Instruments' new safety critical products which show unique defect detection with patterns targeting newer fault models like small delay defects (SDD) and cell aware faults (CAF), and RAM Sequential (RAM-S) ATPG patterns for memory faults. The net defective parts per million (DPPM) recovered using these methods is 72. Based on these results, recommendations for coverage targets and the order in which these faults must be targeted are provided. The unique silicon fall-out data presented in this paper provides a strategy for very low (zero) DPPM test of digital systems-on-chips (SoCs) in advanced technology nodes.
通过采用先进的故障模型和独特的硅沉降分析,实现零DPPM
逻辑故障模型和针对它们的自动测试模式生成(ATPG)工具的采用使数字电路的测试受益匪浅。新技术节点中缺陷的循环过程越来越多地被总故障模型所遗漏,而新的故障模型正在被开发以更好地在硅中针对它们,并且EDA工具已经发展到提供新的自动化功能。本文介绍了德州仪器一种新的安全关键产品的硅结果,该产品显示了独特的缺陷检测模式,针对较新的故障模型,如小延迟缺陷(SDD)和单元感知故障(CAF),以及内存故障的RAM顺序(RAM- s) ATPG模式。使用这些方法回收的净次品百万分率(DPPM)为72。基于这些结果,提供了覆盖目标的建议以及必须针对这些错误的顺序。本文中提出的独特硅沉降数据为先进技术节点中数字片上系统(soc)的极低(零)DPPM测试提供了一种策略。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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