Chip embedding technology developments leading to the emergence of miniaturized system-in-packages

D. Manessis, L. Boettcher, S. Karaszkiewicz, A. Ostmann, R. Aschenbrenner, K. Lang
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引用次数: 20

Abstract

At PCB manufacturing level, 50 µm thin chips have been embedded with pitches up to 200 µm in up to 18″×24″ panels using face-down technology for chip assembly. This paper describes in detail the merits and shortcomings of both face-down and face-up embedding. In addition, it shows the further developments in chip embedding technologies to incorporate chips with even smaller pitches up to 50µm. Embedding of small pitch chips has been realised with concurrent developments in accurate chip positioning, plating methods and chemistries and ultra fine line patterning. The results in this paper show the emergence of a new prototype Embedded chip-QFN package with contact pads at 400µm pitch and a total number of 84I/Os with dimensions of 10mm×10mm. The embedded chip in the QFN package is 5mm×5mm in size and has a peripheral pad configuration at 100µm pitch. All Embedded chip-QFN packages have been manufactured in 10″×14″ panels at prototype level. This paper also shows the latest developments in semi-additive processes for copper structuring of chip embedded packages with pitches lower than 100µm. Ultra fine line structuring technology has been developed up to 15µm L/S copper structures using innovative 2µm copper base foils. Qualitative analysis using acoustic microscopy and shear testing of the QFNs provides evidence of good resin adhesion and package mechanical robustness. Furthermore, this study shows promising results for embedding of chips with pitches dwon to 50µm, introducing a new “vialess” face-down embedding approach where direct contacts are established between copper pads and functional copper foil. Developmental work on “vialess” embedding technology is still ongoing.
芯片嵌入技术的发展导致了小型化系统级封装的出现
在PCB制造层面,50微米的薄芯片已经嵌入了高达200微米的螺距,在多达18个″×24″面板中使用面朝下的技术进行芯片组装。本文详细介绍了面朝下和面朝上两种嵌入方法的优缺点。此外,它还显示了芯片嵌入技术的进一步发展,可以将更小的芯片嵌入到50 μ m的芯片中。小间距芯片的嵌入已经实现了精确芯片定位,电镀方法和化学以及超细线图案的同步发展。本文的结果表明出现了一种新的原型嵌入式芯片- qfn封装,其接触垫间距为400µm,总i / o数为84I/ o,尺寸为10mm×10mm。QFN封装中的嵌入式芯片尺寸为5mm×5mm,具有100 μ m间距的外围焊盘配置。所有嵌入式芯片- qfn封装已在原型级的10个″×14″面板中制造。本文还介绍了螺距小于100 μ m的芯片嵌入式封装的铜结构半增材工艺的最新进展。超细线结构技术已经开发出高达15 μ m L/S的铜结构,使用创新的2 μ m铜基箔。定性分析使用声学显微镜和剪切测试的QFNs提供了良好的树脂附着力和封装机械坚固性的证据。此外,该研究还显示了嵌入距低至50 μ m的芯片的良好结果,引入了一种新的“无孔”面朝下嵌入方法,在铜衬垫和功能铜箔之间建立直接接触。“无病毒”嵌入技术的开发工作仍在进行中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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