High Aspect Ratio~10 TSV Via-last-from-back Process Development and Integration

Abstract

As Moore’s law appears to come to the end when the transistor size approaches to its physical scaling limits, peoples begin to look for the new technology to break through the barrier beyond Moore’s law. TSV is one potential option as it could further increase integration density vertically. In this study, a high aspect ratio 10$\mu \mathrm{m} \times100 \mu$m TSV from the wafer back side is demonstrated and some of the critical process will be discussed.