N. Inoue, M. Tagami, F. Ito, H. Yamamoto, J. Kawahara, E. Soda, H. Shobha, S. Gates, S. Cohen, E. Liniger, A. Madan, J. Protzman, E. T. Ryan, V. Ryan, M. Ueki, Y. Hayashi, T. Spooner
{"title":"Robust low-k film with sub-nm pores and high carbon content for highly reliable Cu/low-k BEOL modules","authors":"N. Inoue, M. Tagami, F. Ito, H. Yamamoto, J. Kawahara, E. Soda, H. Shobha, S. Gates, S. Cohen, E. Liniger, A. Madan, J. Protzman, E. T. Ryan, V. Ryan, M. Ueki, Y. Hayashi, T. Spooner","doi":"10.1109/IITC.2012.6251641","DOIUrl":null,"url":null,"abstract":"Critical parameters of low-k films were defined to keep capacitance benefit and TDDB reliability in the scaling BEOL module, according to various analyses. In order to meet the criteria of high carbon content, low porosity with small pores, and high adhesion strength with less adhesion layer, precursor and process were designed for the SiOCH with k~2.5. The benefits in integration and reliability from the newly developed robust low-k film were verified through the trench-first integration of 80 nm-pitch BEOL modules.","PeriodicalId":165741,"journal":{"name":"2012 IEEE International Interconnect Technology Conference","volume":"348 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Interconnect Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2012.6251641","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Critical parameters of low-k films were defined to keep capacitance benefit and TDDB reliability in the scaling BEOL module, according to various analyses. In order to meet the criteria of high carbon content, low porosity with small pores, and high adhesion strength with less adhesion layer, precursor and process were designed for the SiOCH with k~2.5. The benefits in integration and reliability from the newly developed robust low-k film were verified through the trench-first integration of 80 nm-pitch BEOL modules.
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