Advanced modelling of distortion effects in bipolar transistors using the Mextram model

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 1994-10-10 DOI:10.1109/BIPOL.1994.587854

L. Vreede, H. C. Graaff, Koenraad Mouthaan, M. Kok, J. Tauritz, R. Baets

引用次数: 30

Abstract

Modelling of distortion effects in bipolar transistors due to the onset of quasi saturation is considered. Computational results obtained using Mextram and Gummel Poon models as implemented in a harmonic balance simulator are compared with measured results.

查看原文本刊更多论文

利用Mextram模型对双极晶体管畸变效应进行高级建模

考虑了双极晶体管准饱和发生时的畸变效应的建模。在谐波平衡模拟器中实现了Mextram和Gummel - Poon模型的计算结果，并与实测结果进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting

自引率

0.00%

发文量