Temperature effect on operations and characteristics of p-channel FinFET dielectric RRAM

Abstract

The p-channel based FinFET Dielectric RRAM (FIND RRAM) cell has been proposed for low-cost logic nonvolatile memory (NVM). This p-channel FIND RRAM cell exhibit similar set/reset behaviors as that have been reported on n- channel counterpart, including low set voltage, low reset current and a stable LRS/HRS window. A higher WL voltage can be applied on p-channel WL to facilitate a higher reset speed. In addition, temperature effect on forming, set and reset characteristics are studied in this work.