Characterization of CMOS defects using transient signal analysis

Abstract

We present the results of hardware experiments designed to determine the relative contribution of CMOS coupling mechanisms to off-path signal variations caused by common types of defects. The transient signals measured in defect-free test structures coupled to defective test structures through internodal coupling capacitors, the power supply, the well and substrate are analyzed in the time and frequency domain to determine the characteristics of the signal variations produced by seven types of CMOS defects. The results of these experiments are used in the development of a failure analysis technique based on the analysis of transient signals.