A Bipolar ZrO2-Based Resistive RAM with High Resolution Ratio under proposed method

Abstract

An RRAM (resistive random-access memory) of MIM(metal-insulator-metal) structure, which occupies an area as low as 16 m², is proposed in this letter. The bipolar HfO2-based RRAM devices shows low to high ON/OFF ratio (low means ratio is around 1, high means ratio is around 3) under different current and voltage compliance algorithms during SET and RESET steps. With and without forming step is not relative with the ISET/IRESETratio. Electrode area size (16-1225 m²) is not relative with the ISET/IRESET ratio. More importantly, RRAM device is compatible in LOGIC BEOL (back end of the line). In this study, we proposed a data resolution of ISET/IRESETratio and operation margin enlargement in ZrO2 Ox RAM. In current art definition, data resolution of ISET/IRESET ratio is in the_range of 2-3 orders and operation margin is 4 V (operation voltage is ± 2 V). Proposed algorithm could provide ISET/IRESET ratio of_data resolution in a range of 3–5 and operation margin of 8 V. After 100 turns of test of retention, ZrO2 ReRAM showed data resolution of ISET/IRESETratio, which degraded to 1. New methodology of RHRS/RLRS ratio showed higher data resolution in range of 3–5 orders.