Micro-scratch reduction of replacement metal gate aluminum chemical mechanical polishing at 28nm technology node

2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI:10.1109/IITC.2012.6251583

C. Hsu, R. P. Huang, W. Lin, C. Huang, Y. Hsieh, W. Tsao, C. H. Chen, Y. M. Lin, T. Hung, H. Hsu, C. H. Wang, J. Y. Wu

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Abstract

The defectivity control of replacement metal gate (RMG) chemical mechanical polishing was important for high-k metal gate (HKMG) process. Micro-scratches of RMG CMP easily caused shorting or open of devices. In this study, the micro-scratch reduction of aluminum chemical mechanical polishing (AlCMP) has been investigated to provide solutions for preventing the formation of micro-scratches. Micro-scratches can be reduced by implementing soft pads at platen 2 and platen 3, pad cleaning chemical, and optimized post cleaning condition. Soft pads can reduce micro-scratch levels of AlCMP process, especially at platen 2. However, AlCMP with soft pads easily suffer serious dishing or erosion. Therefore, the balance between micro-scratches and dishing or erosion was crucial for pad selection of AlCMP. Besides, removal of pad stain was also important. Pad stain removed by pad cleaning chemical could get a lower micro-scratch level of AlCMP. In addition to polishing process, post cleaning process was a source of micro-scratch for AlCMP. An unsuitable post cleaning condition caused a counter effect of micro-scratch reduction.

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在28nm技术节点上减少替代金属栅铝化学机械抛光的微划痕

替代金属浇口化学机械抛光的缺陷控制是高钾金属浇口加工的重要环节。RMG CMP的微划痕容易造成设备短路或开路。本研究对铝化学机械抛光(AlCMP)的微划痕减少进行了研究，为防止微划痕的形成提供解决方案。通过在压板2和压板3上安装软垫、垫清洁化学品和优化后清洁条件，可以减少微划痕。软垫可以减少AlCMP工艺的微划痕水平，特别是在压板2。然而，软垫AlCMP容易遭受严重的盘子或侵蚀。因此，平衡微划痕和碟形或侵蚀对于AlCMP衬垫的选择至关重要。此外，去除垫渍也很重要。用清洗垫剂去除垫渍后，AlCMP的微划痕水平较低。除了抛光过程外，后清洗过程也是AlCMP微划痕的来源。不合适的后清洗条件会对减少微划痕产生反作用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2012 IEEE International Interconnect Technology Conference

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