Low-threshold-current operation of lateral current injection membrane distributed-feedback laser bonded on Si

Abstract

Toward realization of an ultralow-power-consumption semiconductor light source for on-chip optical interconnection, we have been investigating the lateral current injection (LCI) membrane distributed feedback (DFB) laser. This time, we realized membrane DFB laser with 158 nm core thickness and demonstrated room-temperature continuous-wave (CW) operation with a threshold current of 390 μA for the cavity length of 360 μm and the stripe width of 0.2 μm, which is lowest value ever reported in a DFB lasers on a Si substrate.