E. Deng, B. Ren, Anqi Li, Yanhao Wang, Zhibin Zhao, Yongzhang Huang
{"title":"An Integrated Packaging Structure of Press Pack for High Power IGBTs","authors":"E. Deng, B. Ren, Anqi Li, Yanhao Wang, Zhibin Zhao, Yongzhang Huang","doi":"10.1109/ISPSD.2019.8757672","DOIUrl":null,"url":null,"abstract":"An Integrated packaging structure of press pack for high power IGBTs is proposed, in view of the shortcomings of Pedestal and Stakpak press pack IGBTs. The simplified model of the three packaging structures were simulated by finite element method. The simulation results reveal the pressure distribution on chip surfaces of the Integrated press pack IGBT is obviously better than the Pedestal one though slightly worse than the Stakpak one. Furthermore, the thermal dissipation ability of the integrated press pack IGBT is the best among the three packaging structures with lowest temperature and uniform temperature distribution. The Integrated packaging structure proposed in this paper meets the expected design requirements with uniform pressure distribution and lower junction temperature.","PeriodicalId":225029,"journal":{"name":"2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2019.8757672","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
An Integrated packaging structure of press pack for high power IGBTs is proposed, in view of the shortcomings of Pedestal and Stakpak press pack IGBTs. The simplified model of the three packaging structures were simulated by finite element method. The simulation results reveal the pressure distribution on chip surfaces of the Integrated press pack IGBT is obviously better than the Pedestal one though slightly worse than the Stakpak one. Furthermore, the thermal dissipation ability of the integrated press pack IGBT is the best among the three packaging structures with lowest temperature and uniform temperature distribution. The Integrated packaging structure proposed in this paper meets the expected design requirements with uniform pressure distribution and lower junction temperature.