An Integrated Packaging Structure of Press Pack for High Power IGBTs

E. Deng, B. Ren, Anqi Li, Yanhao Wang, Zhibin Zhao, Yongzhang Huang
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引用次数: 6

Abstract

An Integrated packaging structure of press pack for high power IGBTs is proposed, in view of the shortcomings of Pedestal and Stakpak press pack IGBTs. The simplified model of the three packaging structures were simulated by finite element method. The simulation results reveal the pressure distribution on chip surfaces of the Integrated press pack IGBT is obviously better than the Pedestal one though slightly worse than the Stakpak one. Furthermore, the thermal dissipation ability of the integrated press pack IGBT is the best among the three packaging structures with lowest temperature and uniform temperature distribution. The Integrated packaging structure proposed in this paper meets the expected design requirements with uniform pressure distribution and lower junction temperature.
大功率igbt压片集成封装结构研究
针对台基式和斯塔帕克式压包igbt存在的不足,提出了一种用于大功率igbt的整体式压包封装结构。采用有限元法对三种封装结构的简化模型进行了仿真。仿真结果表明,集成压包IGBT芯片表面的压力分布明显优于基座压包IGBT,但略逊于斯塔帕克压包IGBT。此外,在温度最低且温度分布均匀的三种封装结构中,集成压包IGBT的散热性能最好。本文提出的集成封装结构满足预期的设计要求,压力分布均匀,结温较低。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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