On modeling faults in FinFET logic circuits

Yuxi Liu, Q. Xu
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引用次数: 48

Abstract

FinFET transistor has much better short-channel characteristics than traditional planar CMOS transistor and will be widely used in next generation technology. Due to its significant structural difference from conventional planar devices, it is essential to revisit whether existing fault models are applicable to detect faults in FinFET logic gates. In this paper, we study some unique defects in FinFET logic circuits and simulate their faulty behavior. Our simulation study shows that most of the defects can be covered with existing fault models, but they vary under different cases and test strategies may need to be augmented to target them.
论FinFET逻辑电路中的建模故障
FinFET晶体管具有比传统平面CMOS晶体管更好的短沟道特性,将在下一代技术中得到广泛应用。由于FinFET与传统平面器件在结构上的显著差异,有必要重新审视现有的故障模型是否适用于FinFET逻辑门的故障检测。本文研究了FinFET逻辑电路中一些独特的缺陷,并对其故障行为进行了仿真。我们的仿真研究表明,大多数缺陷可以用现有的故障模型覆盖,但它们在不同的情况下会有所不同,并且可能需要增加测试策略来针对它们。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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