Three-dimensional integration technology of separate SOI layers for photodetectors and signal processors of CMOS image sensors

M. Goto, K. Hagiwara, Y. Honda, M. Nanba, Y. Iguchi, T. Saraya, M. Kobayashi, E. Higurashi, H. Toshiyoshi, T. Hiramoto
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引用次数: 1

Abstract

We report on three-dimensional (3-D) integration technology of separate silicon-on-insulator (SOI) layers for photodetectors and signal processors of CMOS image sensors. Photodiode, A/D convertor, and counter were integrated in two SOI layers that were vertically connected by embedded Au electrodes, thereby enabling pixel-parallel operation of image sensor. Photodiode has a P+/N/P-structure to suppress the dark current. We developed the image sensor and confirmed its performance of a wide dynamic range of 96 dB and high resolution of 16 bit. The sensor is promising to next-generation ultimate imaging devices.
光电探测器和CMOS图像传感器信号处理器分离SOI层的三维集成技术
本文报道了用于光电探测器和CMOS图像传感器信号处理器的独立绝缘体上硅(SOI)层的三维集成技术。光电二极管、A/D转换器和计数器集成在两个SOI层中,通过嵌入式Au电极垂直连接,从而实现图像传感器的像素并行操作。光电二极管具有P+/N/P结构来抑制暗电流。我们开发了图像传感器,并证实其具有96 dB的宽动态范围和16位的高分辨率。该传感器有望成为下一代终极成像设备。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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