M. Goto, K. Hagiwara, Y. Honda, M. Nanba, Y. Iguchi, T. Saraya, M. Kobayashi, E. Higurashi, H. Toshiyoshi, T. Hiramoto
{"title":"Three-dimensional integration technology of separate SOI layers for photodetectors and signal processors of CMOS image sensors","authors":"M. Goto, K. Hagiwara, Y. Honda, M. Nanba, Y. Iguchi, T. Saraya, M. Kobayashi, E. Higurashi, H. Toshiyoshi, T. Hiramoto","doi":"10.1109/ICEP.2016.7486785","DOIUrl":null,"url":null,"abstract":"We report on three-dimensional (3-D) integration technology of separate silicon-on-insulator (SOI) layers for photodetectors and signal processors of CMOS image sensors. Photodiode, A/D convertor, and counter were integrated in two SOI layers that were vertically connected by embedded Au electrodes, thereby enabling pixel-parallel operation of image sensor. Photodiode has a P+/N/P-structure to suppress the dark current. We developed the image sensor and confirmed its performance of a wide dynamic range of 96 dB and high resolution of 16 bit. The sensor is promising to next-generation ultimate imaging devices.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Conference on Electronics Packaging (ICEP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEP.2016.7486785","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
We report on three-dimensional (3-D) integration technology of separate silicon-on-insulator (SOI) layers for photodetectors and signal processors of CMOS image sensors. Photodiode, A/D convertor, and counter were integrated in two SOI layers that were vertically connected by embedded Au electrodes, thereby enabling pixel-parallel operation of image sensor. Photodiode has a P+/N/P-structure to suppress the dark current. We developed the image sensor and confirmed its performance of a wide dynamic range of 96 dB and high resolution of 16 bit. The sensor is promising to next-generation ultimate imaging devices.