Novel inter layer dielectric and thermal TSV material for enhanced heat mitigation in 3-D IC

K. Khurram, A. Panigrahi, Satish Bonam, Om Krishan Singh, S. Singh
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引用次数: 1

Abstract

In this paper, heat transfer in 3D IC system is investigated using practical and novel materials for Inter Layer Dielectric (ILD) and Thermal Through Silicon Vias (TTSV). The currently used SiO2 ILD is amiss for heat mitigation due to its poor thermal conductivity. The unique thermal and electrical properties of Hexagonal Boron Nitride (h-BN) are explored in this work for improved heat mitigation.
新型层间介质和热TSV材料增强了三维集成电路的散热
本文采用实用和新颖的层间介电(ILD)和热通硅孔(TTSV)材料研究了三维集成电路系统中的传热问题。由于其导热性差,目前使用的SiO2 ILD在散热方面存在缺陷。本文探讨了六方氮化硼(h-BN)独特的热学和电学性能,以改善热缓解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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