Integral heatsink polysilicon semiconductor packaging

Abstract

To evaluate some of the claims made in patent applications, UK 90 14491.6 and US 07/722,741 single-chip and multichip packages were fabricated from polycrystalline silicon (p:Si) with integral, p:Si, cooling fins. By using die-sized pieces of ceramic patterned with a platinum heater (of known temperature coefficient of resistance) data were recorded of heater temperature for a range of input wattages and different cooling conditions. The data are presented as heater temperature (corresponding to device junction temperature) above ambient, against a range of electrical input wattages for seven different package configurations cooled by convection and by forced air. Experimental results indicate that integral heatsink polycrystalline silicon packages for silicon semiconductor devices provide better thermal characteristics than existing ceramic packages.<>