Effect of Thermomigration on Electromigration in SWEAT Structures

2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2023-04-17 DOI:10.1109/EuroSimE56861.2023.10100774

Z. Cui, Xuejun Fan, Guoqi Zhang

{"title":"Effect of Thermomigration on Electromigration in SWEAT Structures","authors":"Z. Cui, Xuejun Fan, Guoqi Zhang","doi":"10.1109/EuroSimE56861.2023.10100774","DOIUrl":null,"url":null,"abstract":"This paper investigates thermomigration (TM) and electromigration (EM) in SWEAT structure. Firstly, the distribution of temperature along SWEAT structure during EM is obtained by using finite element (FE) simulation. The FE simulation results show that the temperature is almost uniformly distributed in the most region of narrow line in SWEAT structure, but temperature decreases rapidly at both sides of conductor. Accordingly, the temperature gradient in the narrow line of SWEAT structures is calculated. Then, we apply the obtained temperature and temperature gradient in the governing equation of EM in terms of atomic concentration. The numerical results show that the TM caused by temperature gradient causes the material depletion near both ends of conductor. At the same time, atoms diffuse from the middle region of conductor to both sides driven by the atomic concentration, causing the voids in middle of conductor.","PeriodicalId":425592,"journal":{"name":"2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EuroSimE56861.2023.10100774","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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Abstract

This paper investigates thermomigration (TM) and electromigration (EM) in SWEAT structure. Firstly, the distribution of temperature along SWEAT structure during EM is obtained by using finite element (FE) simulation. The FE simulation results show that the temperature is almost uniformly distributed in the most region of narrow line in SWEAT structure, but temperature decreases rapidly at both sides of conductor. Accordingly, the temperature gradient in the narrow line of SWEAT structures is calculated. Then, we apply the obtained temperature and temperature gradient in the governing equation of EM in terms of atomic concentration. The numerical results show that the TM caused by temperature gradient causes the material depletion near both ends of conductor. At the same time, atoms diffuse from the middle region of conductor to both sides driven by the atomic concentration, causing the voids in middle of conductor.

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热迁移对SWEAT结构中电迁移的影响

本文研究了SWEAT结构中的热迁移(TM)和电迁移(EM)。首先，通过有限元模拟得到了SWEAT结构在电磁过程中的温度分布;有限元模拟结果表明，在SWEAT结构的大部分窄线区域温度分布基本均匀，但导体两侧温度下降迅速。据此，计算了SWEAT结构窄线内的温度梯度。然后，我们将得到的温度和温度梯度应用到以原子浓度表示的电磁控制方程中。数值结果表明，温度梯度引起的TM会导致导体两端附近的材料损耗。同时，原子在原子浓度的驱动下从导体中部向两侧扩散，形成导体中部的空洞。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)

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