Impact of Ag plated surface roughness towards die bond and wire bond

Goh Chen Liew, Khoo Ju Lee, Yeo Kian Hong, M. Aileen, L. Ming
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引用次数: 2

Abstract

Lead delamination is one of the major challenges faced in semiconductor manufacturing. It happens when there is a separation between silver plated surface (Ag) and encapsulation molding compound (EMC) inside a package. One of the most common approach that were often used is through roughening of Ag surface to improve the mechanical interlocking between Ag surface and EMC [1]. However, the characteristic of Ag surface roughness towards die bond and wire bond performance is not studied in depth. In this paper, evaluation will be done to check the characteristic of Ag surface roughness towards die bond and wire bond process. Relative average roughness (Sa) of the Ag surface will be measured prior to the evaluation. Leadframes with different Sa will be used for each evaluation leg. During die bond process, the condition of surface prior bonding has significant implications towards the quality of the bonds formed. The peak to valley texture of Ag surface is able to affect the mechanical bonding between leadframe and adhesive epoxy. Therefore, die shear test will be done to check the bonding quality of the interface bond. In addition, correlation between Sa towards bond line thickness (BLT) and epoxy bleed out (EBO) will be assessed due to different surface roughness will influence the conformity of the epoxy to the surface. Xray will be done at 0hour and after Temperature Cycle (TC) to check for potential voids caused by different surface roughness. In wire bond, due to the characteristic of Ag, the bonding between Au wire and Ag plated surface is reliable and does not form intermetallic compounds (IMC) at high temperature. [2]. Despite the reliability of the bonding, the impact of surface roughness towards 2nd bond is not fully understood. The ultrasonic power applied on different Ag roughness during wire bond process will induce different friction power density at the bonding interface. It is believed that different friction power will initiate different mechanical interlocking between Au and Ag. Therefore, stitch pull test and Non stick on Lead's (NSOL) ppm will be collected during the study to check the correlation between 2nd bond quality and Ag roughness. The stitch integrity after stress was investigated through two temperature extreme of Temperature cycle (TC) test. Focused ion beam (FIB) analysis will be done to correlate the adhesion between Au and Ag for different surface roughness. Besides, it is predicted that 2nd bond cutting will be less consistent when the surface is rougher. This will lead to inconsistent Free Air Ball (FAB) size and thus impact 1st bond. Therefore, FAB size will be collected through scanning electron microscope (SEM). This paper will present as a fundamental guideline to control Ag surface roughness without compensating the quality at die bond and wire bond processes.
镀银表面粗糙度对模键和丝键的影响
铅层脱层是半导体制造中面临的主要挑战之一。当封装内部镀银表面(Ag)和封装成型化合物(EMC)之间存在分离时,就会发生这种情况。最常用的一种方法是通过对Ag表面进行粗化处理来改善Ag表面与EMC之间的机械联锁[1]。然而,Ag表面粗糙度对模键合和丝键合性能的影响尚未得到深入的研究。本文将对银表面粗糙度的特征进行评估,以检查模具结合和丝结合工艺。在评估之前,将测量银表面的相对平均粗糙度(Sa)。具有不同Sa的先导框架将用于每个评估腿。在模具粘接过程中,表面优先粘接的条件对粘接质量有重要影响。Ag表面的峰谷织构会影响引线骨架与胶粘剂环氧树脂之间的机械结合。因此,将进行模具剪切试验,以检查界面粘结的粘合质量。此外,由于不同的表面粗糙度会影响环氧树脂与表面的一致性,因此将评估Sa与粘合线厚度(BLT)和环氧树脂流出量(EBO)之间的相关性。在0小时和温度循环(TC)之后进行x射线检查,以检查由不同表面粗糙度引起的潜在空隙。在金属丝键合中,由于银的特性,金丝与镀银表面的键合可靠,在高温下不会形成金属间化合物(IMC)。[2]. 尽管结合的可靠性,表面粗糙度对第二键的影响还没有完全了解。在金属丝键合过程中,施加不同银粗糙度的超声功率会在键合界面处产生不同的摩擦功率密度。认为不同的摩擦功率会引起Au和Ag之间不同的机械联锁。因此,在研究期间将收集针拉测试和不粘铅(NSOL) ppm,以检查二键质量与银粗糙度之间的相关性。通过温度循环(TC)的两个极端温度测试,研究了应力作用后的针迹完整性。聚焦离子束(FIB)分析了不同表面粗糙度下Au和Ag之间的粘附关系。此外,预计当表面较粗糙时,二键切割的一致性会降低。这将导致自由空气球(FAB)尺寸不一致,从而影响第一键。因此,将通过扫描电子显微镜(SEM)收集FAB的尺寸。本文将提出一个基本的指导方针,以控制银表面粗糙度而不补偿在模具结合和丝结合过程的质量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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