A 14-b 2.5 MSPS pipelined ADC with on chip EPROM

D. Mercer
{"title":"A 14-b 2.5 MSPS pipelined ADC with on chip EPROM","authors":"D. Mercer","doi":"10.1109/BIPOL.1994.587844","DOIUrl":null,"url":null,"abstract":"A 14-b 2.5-MSPS, multi-stage pipeline, subranging analog-to-digital converter is presented. In addition to conventional laser-wafer-trim, on chip, \"write once\" EPROM is used to calibrate inter-stage gain errors at package sort. Integral nonlinearity errors as small as +/- 2LSB, and differential nonlinearity errors of -0.6, +0.8 LSB have been achieved. The 5.4 mm by 4.4 mm device includes a 2.5-V reference is built on a 2-/spl mu/m 10-V BiCMOS process and consumes 550 mW of power.","PeriodicalId":373721,"journal":{"name":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1994.587844","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14

Abstract

A 14-b 2.5-MSPS, multi-stage pipeline, subranging analog-to-digital converter is presented. In addition to conventional laser-wafer-trim, on chip, "write once" EPROM is used to calibrate inter-stage gain errors at package sort. Integral nonlinearity errors as small as +/- 2LSB, and differential nonlinearity errors of -0.6, +0.8 LSB have been achieved. The 5.4 mm by 4.4 mm device includes a 2.5-V reference is built on a 2-/spl mu/m 10-V BiCMOS process and consumes 550 mW of power.
带片上EPROM的14-b 2.5 MSPS流水线ADC
提出了一种14b 2.5 msps多级流水线分频模数转换器。除了传统的激光晶圆修剪外,在芯片上,“一次写入”EPROM用于校准封装排序时的级间增益误差。积分非线性误差可达+/- 2LSB,微分非线性误差可达-0.6、+0.8 LSB。这款5.4 mm × 4.4 mm器件采用2.5 v基准电压,采用2-/spl mu/m 10-V BiCMOS工艺,功耗为550 mW。
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