{"title":"Inversion-type surface channel In0.53]Ga{in0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts","authors":"H. Chin, Xinke Liu, L. Tan, Y. Yeo","doi":"10.1109/VTSA.2009.5159330","DOIUrl":null,"url":null,"abstract":"We report the first demonstration of a surface channel inversiontype In<inf>0.53</inf>Ga<inf>0.47</inf>As n-MOSFET featuring gold-free palladium-germanium (PdGe) ohmic contacts and self-aligned S/D formed by silicon and phosphorus co-implantation. A gate stack comprising TaN/HfAlO/In<inf>0.53</inf>Ga<inf>0.47</inf>As is also featured. Excellent transistor output characteristics with high drain current on/off ratio of 10<sup>4</sup>, high peak electron mobility of 1420 cm<sup>2</sup>/Vs and peak transconductance of 142 mS/mm at gate length of 2 µm were demonstrated. In addition, the integration of low resistance PdGe ohmic contacts on In<inf>0.53</inf>Ga<inf>0.47</inf>As alleviates contamination concerns associated with the common use of gold-based contacts on In<inf>0.53</inf>Ga<inf>0.47</inf>As.","PeriodicalId":309622,"journal":{"name":"2009 International Symposium on VLSI Technology, Systems, and Applications","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2009-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Symposium on VLSI Technology, Systems, and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTSA.2009.5159330","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We report the first demonstration of a surface channel inversiontype In0.53Ga0.47As n-MOSFET featuring gold-free palladium-germanium (PdGe) ohmic contacts and self-aligned S/D formed by silicon and phosphorus co-implantation. A gate stack comprising TaN/HfAlO/In0.53Ga0.47As is also featured. Excellent transistor output characteristics with high drain current on/off ratio of 104, high peak electron mobility of 1420 cm2/Vs and peak transconductance of 142 mS/mm at gate length of 2 µm were demonstrated. In addition, the integration of low resistance PdGe ohmic contacts on In0.53Ga0.47As alleviates contamination concerns associated with the common use of gold-based contacts on In0.53Ga0.47As.
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