High temperature operation of diamond power SBD

Abstract

Vertical structured diamond Schottky barrier diodes with thick field plate have been developed. The diamond VSBD with 30μm Schottky electrode realizes low specific on-resistance and reverse voltage such as 9.4mOhm-cm² and 840V, respectively, even at 250°C. The Baliga's figure of limit (BV_BD²/R_onS) is 75.1 MW/cm², which is the best value in diamond diode at present. The diamond VSBD with 1,000μm Schottky electrode shows high forward current and low resistance such as more than 5 ampere and 0.6 Ohm, respectively, at 250°C. The estimated parasitic resistance of the SBD is less than 0.04 Ohm.