Negative drain pulse stress induced two-stage degradation of P-channel poly-Si thin-film transistors

Abstract

Negative drain pulse stress induced degradation in p-channel poly-Si thin-film transistors (TFTs) was systematically investigated. On-state current (ION) exhibits two-stage degradation behaviors. In the first-stage degradation, electron injection related equivalent DC effect is responsible for the degradation behavior. While in the second-stage, based on a previously proposed PN junction degradation model, degradation behavior can be well understood, which is controlled by dynamic hot carrier (HC) degradation mechanism.