Selective Growth of CNT on Ni/Cu Substrate

Abstract

This paper presents a method for selective growth of CNT films. Specific areas for CNT growing were defined by patterning Ni electrodes on a Cu substrate using lithography process. CNT films were grown on the substrate by HFCVD method at atmospheric pressure using ethanol and hydrogen as sources. The films were examined and confirmed with SEM, Raman and EDX analysis. The authors observed that CNT only grow in selective areas of Ni. None can be grown on Cu background. This finding suggests a novel method of selective growth of CNT using Cu as a masking layer. Preliminary results also show possibility of growing CNT across the gaps between 3D interdigital Ni electrodes fabricated by LIGA technique.