Effect of Shape Deformation by Edge Roughness in Spin-Orbit Torque Magnetoresistive Random-Access Memory

J. Byun, D. Kang, M. Shin
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Abstract

We present a micromagnetic simulation study of shape deformation and edge roughness effect in the spin orbit torque-magnetic random access memory (SOT-MRAM). The two different write schemes, magnetic field induced SOT write scheme and SOT-spin transfer torque (STT) hybrid write scheme, were studied in the presence of the stray field from the reference layer. We found that for conventional magnetic field induced SOT, shape deformation can cause non-deterministic switching even at a relatively high gilbert damping constant of 0.08. Higher Gilbert damping constant (a) of 0.09 is needed to ensure deterministic switching under the shape deformation effect. The SOT-STT hybrid write scheme showed deterministic switching even at lower damping constant with relatively low device variations due to the constant -z directed torque of the STT. However, with higher damping constant of a 0.1, device variation with the SOT-STT hybrid write scheme increases while the SOT-magnetic field write scheme successfully compensates the most of the variation caused by the edge deformation.
边缘粗糙度对自旋轨道转矩磁阻随机存取存储器形状变形的影响
本文对自旋轨道转矩-磁随机存取存储器(SOT-MRAM)的形状变形和边缘粗糙度效应进行了微磁仿真研究。在参考层杂散场存在的情况下,研究了两种不同的写入方案,即磁场诱导的SOT写入方案和SOT-自旋传递扭矩(STT)混合写入方案。我们发现,对于传统的磁场感应SOT,即使在相对较高的吉尔伯特阻尼常数为0.08时,形状变形也会导致不确定性开关。为保证形状变形效应下的确定性切换,需要较高的吉尔伯特阻尼常数(a)为0.09。由于STT的-z定向转矩恒定,即使在较低的阻尼常数和相对较低的器件变化下,SOT-STT混合写入方案也显示出确定性开关。然而,当阻尼常数为0.1时,SOT-STT混合写入方案的器件变化增加,而sot -磁场写入方案成功地补偿了边缘变形引起的大部分变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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