{"title":"Suspended microstructures made using silicon migration","authors":"R. Kant, M. Ziaei-Moayyed, R. T. Howe","doi":"10.1109/SENSOR.2009.5285949","DOIUrl":null,"url":null,"abstract":"We demonstrate a new approach for large area releases in single crystal silicon without the use of traditional undercutting-based etches. Our approach uses silicon migration to create suspended microstructures by transforming periodic array of trenches into a continuous void under the silicon surface. We show close agreement between simulation of the silicon migration phenomenon and fabrication results, and demonstrate the viability for creating large released microstructures and micro-fluidic devices.","PeriodicalId":247826,"journal":{"name":"TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SENSOR.2009.5285949","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
We demonstrate a new approach for large area releases in single crystal silicon without the use of traditional undercutting-based etches. Our approach uses silicon migration to create suspended microstructures by transforming periodic array of trenches into a continuous void under the silicon surface. We show close agreement between simulation of the silicon migration phenomenon and fabrication results, and demonstrate the viability for creating large released microstructures and micro-fluidic devices.