The effects of furnace N/sub 2/O annealing on MOSFETs

1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1992.307438

Z. Liu, J. Krick, H. Wann, P. Ko, C. Hu, Y. Cheng

引用次数: 7

Abstract

MOSFETs with 70-110 AA thick furnace N/sub 2/O-annealed gate oxides are examined at both room and liquid nitrogen temperatures. The N/sub 2/O anneal not only improves device performance, e.g. by increasing the high normal field mobility and current drivability, but it also suppresses degradation induced by Fowler-Nordheim and channel hot-carrier injection. Random telegraph noise measurements reveal a possible correlation between the interface properties and the mobility.<>

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炉内N/sub /O退火对mosfet的影响

在室温和液氮温度下，研究了70- 110aa厚炉内N/sub / o退火栅极氧化物的mosfet。N/sub 2/O退火不仅提高了器件性能，例如通过增加高法向场迁移率和电流可驱动性，而且还抑制了Fowler-Nordheim和通道热载流子注入引起的退化。随机电报噪声测量揭示了界面性质与迁移率之间可能存在的相关性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1992 International Technical Digest on Electron Devices Meeting

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