Advanced DBC (direct bonded copper) substrates for high power and high voltage electronics

Twenty-Second Annual IEEE Semiconductor Thermal Measurement And Management Symposium Pub Date : 2006-03-14 DOI:10.1109/STHERM.2006.1625233

J. Schulz-Harder

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引用次数: 12

Abstract

Direct bond copper (DBC) substrates have been proven for many years as an excellent solution for electrical isolation and thermal management of high power semiconductor modules. The advantages of DBC-substrates are high current carrying capability due to thick copper metallization and a thermal expansion close to that of silicon at the copper surface due to high bond strength of copper to ceramic. The integration of this DBC substrate to a liquid cold plate made by the DBC process has made thermal resistances in the range of 30mK/W possible for a wide range of power applications. The main exception is in the case of high voltages (3 kV to 7 kV) where the partial discharge of typical DBC substrates makes them unacceptable. Increasing requirements for thermal performance and partial discharge free behavior of high power modules have driven research to further improve DBC substrates and the thermal performance available to high voltage applications. This paper will present recent developments of partial discharge free and liquid cooled substrates

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用于大功率和高压电子设备的先进DBC(直接键合铜)衬底

直接键合铜(DBC)衬底多年来已被证明是高功率半导体模块的电隔离和热管理的优秀解决方案。dbc衬底的优点是由于铜金属化较厚而具有较高的载流能力，并且由于铜与陶瓷的结合强度高，在铜表面具有接近硅的热膨胀。将DBC衬底集成到DBC工艺制造的液体冷板上，可以在广泛的功率应用中实现30mK/W范围内的热阻。主要的例外是在高压(3kv至7kv)的情况下，典型DBC衬底的局部放电使其不可接受。对高功率模块的热性能和不局部放电性能的需求不断增加，推动了进一步改进DBC基板和高压应用热性能的研究。本文将介绍部分无放电和液冷基板的最新进展

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Twenty-Second Annual IEEE Semiconductor Thermal Measurement And Management Symposium

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