Thermal stability of the dielectric properties of the low-loss, organic material RT/duroid 6002 from 30 GHz to 70 GHz

C. D. Morcillo, S. Bhattacharya, A. Horn, J. Papapolymerou
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引用次数: 6

Abstract

For the first time, the thermal stability of the dielectric properties, i.e. the relative permittivity and the loss tangent, are presented for RT/duroid® 6002 from 30 GHz to 70 GHz over the temperature range between 20 °C and 200 °C, using the microstrip ring resonator method at two different microstrip impedances. High-frequency-resolution, Multiline TRL calibrations were performed at each temperature point to increase the accuracy of the measurements. Measurements show a remarkably-stable normalized temperature coefficient of the relative permittivity of −17.6 ppm/°C across the entire bandwidth. Likewise, the normalized loss tangent temperature coefficient had a value of about 0.00118 °C−1, with little variations throughout the measurement bandwidth.
低损耗有机材料RT/duroid 6002介电性能在30 ~ 70 GHz范围内的热稳定性
本文首次利用微带环形谐振器方法,研究了RT/duroid®6002在20°C至200°C的温度范围内,在30 GHz至70 GHz范围内,在两种不同的微带阻抗下,介电性能的热稳定性,即相对介电常数和损耗正切。在每个温度点进行高频分辨率、多线TRL校准,以提高测量精度。测量结果表明,在整个带宽范围内,相对介电常数的归一化温度系数为- 17.6 ppm/°C,非常稳定。同样,归一化损耗正切温度系数约为0.00118°C−1,在整个测量带宽内变化很小。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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