CMOS challenges of keeping up with Moore's Law

M. Orlowski
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引用次数: 10

Abstract

As the conventional scaling of CMOS technology is reaching its physical limitations, new materials and processes hold promise of giving CMOS a new lease on life. In order to turn an opportunity into a reality, the semiconductor industry is confronted with a daunting task of managing and co-integrating an unprecedented confluence of innovative approaches: high-k dielectric materials (HfO2, HfSiON) possibly to be formed by atomic layer deposition (ALD) are needed to curb gate leakage current and thus power consumption; metal gates (TiN, TaC, MoN) are requisite for optimization of threshold voltages for MOSFETs allowing low voltage operation; engineered substrates (sSOI, SiGeOI, GOI, dual substrate orientation) along with uni-axial and biaxial stressor techniques are required to keep the channel carrier mobility high to effect further performance gains; higher-mass dopant species (B10H14) are being synthesized to enable ultra-shallow junction; new dopant activation techniques (spike, pulsed laser anneals) and new contact metallization (NiSi) are pursued to induce high dopant activation and low contact resistance, respectively. The introduction of these innovative approaches is coming at a high price, though: the new materials pose new set of concurrent, multifarious challenges both for unit process development and for process integration. This paper reviews the technology opportunities and focuses on the trade-offs between performance benefits, scalability, complexity, co-integrability (including prominently spatial and temporal constraints on thermal processing), and impact on metrology, yield, and reliability
CMOS跟上摩尔定律的挑战
随着CMOS技术的传统缩放达到其物理极限,新材料和新工艺有望赋予CMOS新的生命。为了将机遇变为现实,半导体行业面临着一项艰巨的任务,即管理和协集成前所未有的创新方法:需要通过原子层沉积(ALD)形成高k介电材料(HfO2, HfSiON)来抑制栅极泄漏电流,从而降低功耗;金属栅极(TiN, TaC, MoN)对于优化mosfet的阈值电压是必需的,允许低电压工作;工程基板(sSOI, SiGeOI, GOI,双基板取向)以及单轴和双轴应力源技术需要保持通道载流子的高迁移率,以实现进一步的性能提升;合成了高质量的掺杂物质(B10H14)以实现超浅结;新的掺杂激活技术(脉冲激光退火、脉冲激光退火)和新的接触金属化技术(NiSi)分别诱导高掺杂激活和低接触电阻。然而,这些创新方法的引入是要付出高昂代价的:新材料对单元工艺开发和工艺集成提出了一系列新的并发的、各种各样的挑战。本文回顾了技术机遇,重点讨论了性能优势、可扩展性、复杂性、协积性(包括热加工的显著空间和时间限制)以及对计量、成品率和可靠性的影响之间的权衡
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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