Y. Kim, K. Lee, Won-young Chung, T. Kim, Y. Park, J. Kong
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引用次数: 11
Abstract
In this paper, we present a new simulation methodology for analyzing cell characteristics of the chalcogenide based phase-change device, PRAM (Phase-change Random Access Memory), which is the future-generation non-volatile memory. Using the new simulation methodology, we analyze the effect of process variation, which is the most sensitive factor to operate the cell of PRAM.