Conduction mechanisms through SIMOX buried oxide

Abstract

In this study, the electric-field, time, and temperature dependence of intrinsic SIMOX buried-oxide conduction has been characterized. Asymmetry was observed between positive and negative applied gate voltage. Two primary conduction regimes have been identified for both polarities: a high-field regime that appears to be due to Fowler-Nordheim tunneling with substantial apparent barrier-height lowering at both injecting interfaces, and a low-field regime likely due to time-dependent trapping current.<>