Fast three-dimensional simulation of buried EUV mask defect interaction with absorber features

C. Clifford, A. Neureuther
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引用次数: 10

Abstract

To simulate the interaction of buried defects and absorber features in EUV masks, a full three-dimensional, fast, integrated, simulator based on ray tracing and a thin mask model is presented. This simulator allows rapid assessment of the effects of buried defects on EUV printing. This new simulator, RADICAL (Rapid Absorber Defect Interaction Computation for Advanced Lithography), gives a 450X speed increase compared to FDTD, and matches FDTD within 1.5nm for predicting CD change due to a buried defect. RADICAL consists of three sequential steps: the propagation of the mask illumination down through the absorber pattern, the reflection off the defective multilayer, and the propagation back up through the absorber. A propagated thin mask model is used to model the down/up propagation through the absorber pattern and a ray tracing simulator is used for the multilayer reflection. These simulators are linked together using a Fourier transform to convert the near field output of one simulator step into a set of plane wave inputs for the next.
深埋EUV掩膜缺陷与吸收体特征相互作用的快速三维模拟
为了模拟EUV掩模中埋藏缺陷与吸收特性的相互作用,提出了一种基于光线追踪和薄掩模模型的全三维、快速、集成的模拟器。该模拟器可以快速评估埋藏缺陷对EUV打印的影响。这个新的模拟器,RADICAL(先进光刻快速吸收缺陷相互作用计算),与FDTD相比速度提高了450倍,并且在1.5nm内匹配FDTD,用于预测由于埋藏缺陷导致的CD变化。RADICAL由三个连续的步骤组成:掩模照明通过吸收器模式向下传播,有缺陷的多层的反射,以及通过吸收器向上传播。透射薄掩模模型用于模拟吸收器模式下/上的传播,射线追踪模拟器用于模拟多层反射。这些模拟器使用傅立叶变换连接在一起,将一个模拟器步骤的近场输出转换为下一个步骤的一组平面波输入。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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