A New "Multi-step" Power-law TDDB Lifetime Model and Boron Penetration Effect on TDDB of Ultra Thin oxide

Abstract

In this work, the "multi-step" power law TDDB model is proposed for ultra thin oxide. The nitrogen concentration effect on the voltage acceleration slope in p-FET is modeled by the boron penetration, and the voltage acceleration slope can be well explained by the "multi-step" power-law TDDB model.