Bed of nails - 100 microns pitch wafer level interconnections process

V. S. Rao, A. Tay, V. Kripesh, C. T. Lim, S. Yoon
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引用次数: 21

Abstract

The rapid advances in IC design and fabrication continue to challenge the electronic packaging technology, in terms of fine pitch, high performance, low cost and better reliability. In the near future, the demands for higher I/O count per integrated circuit (IC) chip increases as the shift towards the nano ICs with feature size less than 90nm. To meet the above requirements, the chip-to-substrate interconnection technologies with less than 100/spl mu/m pitch are required. Currently, the CTE mismatch between Si chip and substrate and assembly yield of such fine pitch interconnections serves as the biggest bottle neck issue. In this work a simple copper column based bed of nails-wafer level interconnects showing greater potentials in meeting some of these requirements for next-generation packaging is reported. The process development of fabricating the copper columns with various height and solder deposition on to the tip of the column is reported. This technology has been developed to meet fine pitch of 100 microns and high density interconnections. The development of a test chip demonstrator of 10 /spl times/ 10mm/sup 2/ with 3338 I/Os designed and fabricated for optimizing the process and the board level reliability test with out underfill performed under temperature cycling at range of -40/spl deg/C to 100/spl deg/C are also presented.
钉床- 100微米间距晶圆级互连工艺
集成电路设计和制造的快速发展不断挑战着电子封装技术在细间距、高性能、低成本和更好的可靠性方面的发展。在不久的将来,随着向特征尺寸小于90nm的纳米集成电路的转变,对每个集成电路(IC)芯片更高的I/O计数的需求将增加。为满足上述要求,需要采用间距小于100/spl mu/m的芯片-衬底互连技术。目前,硅片与衬底之间的CTE不匹配以及这种细间距互连的组装良率是最大的瓶颈问题。在这项工作中,一种简单的铜柱基钉床-晶圆级互连显示出更大的潜力,可以满足下一代封装的一些要求。本文报道了不同高度铜柱的制备工艺及柱端焊料沉积的研究进展。该技术是为满足100微米的细间距和高密度互连而发展起来的。为优化工艺,设计制作了10 /spl次/ 10mm/sup 2/ 3338个I/ o的测试芯片演示器,并在-40/spl℃~ 100/spl℃的温度循环下进行了无底填的板级可靠性测试。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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