Cost-efficient sub-lithographic patterning with tilted-ion implantation (TII)

Abstract

A sub-lithographic patterning technique using tilted-ion implantation (TII) is discussed herein, as an approach for extending Moore's Law. Its suitability for defining patterns self-aligned to pre-existing linear and non-linear hard-mask features is demonstrated experimentally. In addition, its resolution limit (< 10 nm) and line- edge roughness (LER) are investigated via experiments as well as Monte Carlo process simulations.