Extremely narrow spectral widths from resonant cavity light-emitting diodes (RCLEDs) suitable for wavelength-division multiplexing at 1.3 mu m and 1.55 mu m

Abstract

Resonant cavity light emitting diodes (RCLEDs) operating at 1.3 mu m and 1.5 mu m have been fabricated. The InGaAsP quantum well active region is positioned in the antinode of the optical resonance which is set up between an InP-InGaAsP distributed Bragg reflector (DBR) and a silver mirror. The resulting spontaneous emission through the substrate exhibits an enhancement of spectral power density and a reduction in linewidth by more than an order of magnitude compared to conventional devices. Such devices would be suitable for use in wavelength division multiplexing applications.<>