SEL and TID Characterization of a Cobham Advanced Electronic Solutions SONOS Nonvolatile Memory

2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC) Pub Date : 2020-11-01 DOI:10.1109/REDW51883.2020.9325828

M. Von Thun, D. Bass, Radu Dumitru, Rex Anderson, Jack Benthem, Shaw Ashenafi

引用次数: 0

Abstract

A Cobham Advanced Electronic Solutions SONOS based Nor Flash non-volatile memory has been designed, manufactured, and characterized for radiation effects. The radiation effects results will be presented.

查看原文本刊更多论文

Cobham先进电子解决方案SONOS非易失性存储器的SEL和TID表征

Cobham Advanced Electronic Solutions基于SONOS的Nor Flash非易失性存储器已被设计、制造并表征为辐射效应。将介绍辐射效应的结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC)

自引率

0.00%

发文量