Extending the pseudo-stuck-at fault model to provide complete IDDQ coverage

R. Aitken
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引用次数: 10

Abstract

Since its inception, the pseudo-stuck-at fault model has demonstrated its usefulness in generating IDDQ patterns, calculating coverage, and diagnosing defects. However, the model's definition has lacked rigor, which has resulted in multiple, incompatible, interpretations. This paper provides a complete definition for the model and demonstrates how variations will cause a loss of defect coverage. The covering relationship between the pseudo-stuck-at (PSA) model and leakage faults is proven for all combinational CMOS cells. This relationship is extended to show the effect that undetectable PSA faults have on leakage fault coverage. It is shown how to apply the model to sequential cells such as flip-flops and latches. The PSA model is also extended to cover both short and open faults in chip interconnect. A weighting function is introduced to tie the coverage more closely to process defect statistics. Finally, experimental results are given to show the effectiveness of the model on actual ASICs.
扩展伪卡在故障模型以提供完整的IDDQ覆盖
从一开始,伪卡在故障模型就证明了它在生成IDDQ模式、计算覆盖率和诊断缺陷方面的有用性。然而,该模型的定义缺乏严谨性,这导致了多种不相容的解释。本文为模型提供了一个完整的定义,并演示了变化将如何导致缺陷覆盖率的损失。验证了所有组合CMOS电池的伪卡点(PSA)模型与泄漏故障之间的覆盖关系。将这一关系扩展到不可检测的PSA故障对泄漏故障覆盖率的影响。演示了如何将该模型应用于顺序单元,如触发器和锁存器。该模型还扩展到涵盖芯片互连中的短故障和开故障。引入一个加权函数来将覆盖率与过程缺陷统计更紧密地联系起来。最后,通过实验验证了该模型在实际集成电路上的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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