Radiation effects in BESOI structures with different insulating layers

Abstract

Silicon-on-insulator (SOI) materials are known to possess many features attractive for use in microelectronic applications. To take advantage of these features, it is important to understand and characterize the effects of ionizing radiation on the electrical properties of SOI materials and devices. In this paper we apply the photocurrent technique together with capacitance-voltage measurements to study four representative BESOI buried oxide (BOX) materials with different processing histories. In the photoconduction current technique, an X-ray machine is used to measure a radiation-generated current that can be related to the amount of charge moving through the BOX layer. These methods allow us to develop a clear picture of the radiation-induced charge trapping and transport properties of SOI material.<>